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IGBT

Infineon 650 V CoolSic Hybrid IGBT
Infineon 650 V CoolSic Hybrid IGBT

650 V CoolSic Hybrid IGBT for Superior Switching Frequency and Reduced Switching Losses in DC-DC Converters

Infineon Technologies has introduced a 650 V CoolSic Hybrid IGBT portfolio in a discrete package for battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power sup
650V TRENCHSTOP IGBT7 by Infineon Technologies
650V TRENCHSTOP IGBT7 by Infineon Technologies

650V TRENCHSTOP IGBT7 in TO-247 Housing with Excellent EMI Performance for High Humidity Industrial Applications

Infineon Technologies has released TRENCHSTOP IGBT7 technology in a discrete housing for industrial motor drives, power factor correction, photovoltaic and uninterruptible power supplies.
LV100 Type T-Series IGBT Module from Mitsubishi
Mitsubishi's LV100 Type T-Series IGBT Module

New T-series IGBTs from Mitsubishi Electric to Reduce Power Consumption and Size in Renewable Energy Power Supply Systems

Mitsubishi Electric Corporation has introduced the LV100-type T-series insulated gate bipolar transistor (IGBT) module for industrial uses.
IGBT  – Symbol, Construction, and Working
IGBT – Symbol, Construction, and Working

A Brief Overview of IGBT - Insulated Gate Bipolar Transistor

The most popular and commonly used power electronic switch devices are the Bipolar Junction Transistor BJT and the MOSFET.
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

Toshiba has launched its new IC – GT20N135SRA, a 1350V discrete IGBT to be used in voltage resonance circuits in tabletop IH cookers, microwave ovens, and other home appliances.
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications
FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications

FF900R12ME7B11 – Dual IGBT7 Module with 900A Power Rating for Industrial Drive Applications

Infineon Technologies has introduced the new FF900R12ME7_B11 module with emitter controlled 7th generation diode for the application of variable speed drives.
FGA15N120 IGBT
FGA15N120 IGBT

FGA15N120 IGBT

The FGA15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A.  It also has a very low collector emitter saturation voltage of 1.9V and low switching losses.  
FGA25N120 IGBT
FGA25N120 IGBT

FGA25N120 IGBT

The FGA25N120 is a high voltage and high current IGBT with NPT Trench Technology. The IGBT can switch 1200V with a current rating of upto 50A. It also has a very low gate saturation voltage of 2V allowing it to be used in low voltage driver side designs.
IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications
IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications

IEWS20R5135IPB – Protected IGBT with built-in driver IC for Induction Heating Applications

Infineon Technologies has launched the new F-Series Protected IGBTs with TRENCHSTOP feature. This new IGBT includes built-in logic functionality and a dedicated driver IC which is programmable by the user.