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GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits

Toshiba has launched its new IC – GT20N135SRA, a 1350V discrete IGBT to be used in voltage resonance circuits in tabletop IH cookers, microwave ovens, and other home appliances. The IC features a collector-emitter saturation voltage of 1.75V and a diode forward voltage of 1.8V. The company claims that both IGBT and diode have improved conduction loss characteristics at high temperatures, and the new IGBT can help reduce equipment power consumption.

 

Features of GT20N135SRA IGBT:

  • Collector-emitter voltage VCES (V) is 1350V
  • Collector current (DC) IC @ TC = 25 is 40A
  • Collector current (DC) IC @ TC = 100 is 20A
  • Junction temperature TJ is 175
  • Low conduction loss
  • Low junction-to-case thermal resistance: Rth(j-C)=0.48/W (max)
  • Suppresses short circuit current that flows through the resonance capacitor when equipment is switched on
  • Wide safe operation area

Note: More technical details on the GT20N135SRA IGBT can be found in the datasheet which is provided at the bottom of the page

 

The IC module also features a junction-to-case thermal resistance of 0.48 /W (max) allowing easier thermal design. The IC suppresses the short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current peak value is 129A and has a wide safe operating area and makes its design easier. The company announced that the modules shipment has started from 23-12-2019. For more details on the GT20N135SRA product, visit the product’s official page.

Component Datasheet

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