650 V CoolSic Hybrid IGBT for Superior Switching Frequency and Reduced Switching Losses in DC-DC Converters

Infineon 650 V CoolSic Hybrid IGBT
Infineon 650 V CoolSic Hybrid IGBT
Infineon 650 V CoolSic Hybrid IGBT

Infineon Technologies has introduced a 650 V CoolSic Hybrid IGBT portfolio in a discrete package for battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), as well as server and telecom switched-mode-power supplies (SMPS). Combining the key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes, the new device delivers superior switching frequencies and reduced switching losses.

 

The CoolSic Hybrid IGBT has been designed with a freewheeling SiC Schottky barrier diode co-packed with an IGBT, the CoolSiC Hybrid IGBTs, hence they can operate with reduced switching losses at almost unchanged dv/dt and di/dt values. Compared to the standard silicon-based solutions the CoolSic Hybrid IGBT has a 60% reduction of Eon and 30% reduction of Eoff.

 

With an ability to increase the switching frequency up to 40% with unchanged output power requirements the new IGBT has an efficiency improvement of 0.1 percent for each 10 kHz switching frequency. The superior switching frequencies and reduced switching losses make the device suitable for DC-DC power converters and power factor correction (PFC) in battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), as well as server and telecom switched-mode-power supplies (SMPS).

 

The unipolar nature of Schottky barrier diodes allows them to switch faster without severe oscillations and risk of a parasitic turn-on. The  650 V CoolSic Hybrid IGBT portfolio is available for purchase in the TO-247-3 and TO-247-4 pin Kelvin Emitter package.

 

Features of 650 V CoolSic Hybrid IGBT

  • Ultra-low switching losses due to the combination of TRENCHSTOP 5 and CoolSiC diode technology
  • Very low on-state losses
  • Benchmark switching efficiency in hard switching topologies
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating; RoHS compliant
  • Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

 

Note: More technical information can be found in the IKW75N65RH5 Datasheet linked at bottom of this page and on the CoolSiC Hybrid Discrete product page.

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