Microchip Technology Inc. has announced a new 1200V production-ready digital gate driver to complement its broad portfolio of silicon carbide MOSFET discrete and module products.
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.
Intending to achieve higher efficiency and increased output power in a single surface-mounted TO263 7L package, ROHM has announced the BM2SC12xFP2-LBZ power ICs with integrated 1700V SiC MOSFET.
ON Semiconductors has introduced 1200V full silicon carbide (SiC) MOSFET 2-PACK modules pair (NXH010P120MNF1 and NXH006P120MNF2) with superior switching performance and enhanced thermals for offering reliability and robustness in the electric vehicle (EV) market.
CISSOID has added new liquid-cooled modules to its growing platform of 3-Phase Silicon Carbide (SiC) MOSFET Intelligent Power Module (IPM) products for E-mobility tailored for lower switching losses or higher power.
STMicroelectronics has introduced the STGAPSiCS, 4A Galvanically isolated gate driver for safe control of silicon carbide (SiC) MOSFETs and operates from a high-voltage rail up to 1200V.