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SiC MOSFET

Diodes Incorporated SiC MOSFETs
Diodes Incorporated SiC MOSFETs

New SiC MOSFETs Enable Next-Generation EV/HEV Subsystems with Higher Efficiency and Power Density

Diodes Incorporated introduced the automotive-compliant Silicon Carbide (SiC) MOSFETs DMWSH120H90SM4Q and
1200 V CoolSiCTM MOSFETs
1200 V CoolSiCTM MOSFETs

Next-Gen CoolSiC 1200 V SiC Trench MOSFET with Optimized Chip Technology for OBC and DC-DC Applications

Infineon introduces its next generation of TO263-7-packaged 1200 V CoolSiCTM MOSFETs designed for automotive applications.
UCC5880-Q1 Reinforced Isolated Gate Driver
UCC5880-Q1 Reinforced Isolated Gate Driver

Highly Integrated Isolated Real-Time Variable SiC Gate Driver Maximizes EV Driving Range

Texas Instruments has introduced the new highly integrated, functional safety-compliant, isolated gate driver that enables engineers to design more efficient traction inverters and maximize electric vehicle (EV) driving range.
New 1700V Silicon Carbide MOSFET and Schottky Diodes
New 1700V Silicon Carbide MOSFET and Schottky Diodes

Onsemi Introduces New 1700V Silicon Carbide MOSFET and Schottky Diodes for Energy Infrastructure and Industrial Applications

Onsemi, recently revealed the name of its silicon carbide (SiC) family to be "EliteSiC".
ACEPACK Power Modules with SiC MOSFETs
ACEPACK Power Modules with SiC MOSFETs

New ACEPACK Power Modules with SiC MOSFETs Designed for DC/DC Converters

STMicroelectronics has released two new STPOWER modules that use ST’s ACEPACK 2 package technology to ensure high power density and contain 1200V silicon-carbide (SiC) MOSFETs in popular
TO-Leadless Packaged Silicon Carbide MOSFET
TO-Leadless Packaged Silicon Carbide MOSFET

New TO-Leadless Packaged Silicon Carbide MOSFET with Low Output Capacitance and 30% Savings in PCB Area

onsemi has announced the new TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET that addresses the rapidly growing need for high-performance switching devices which are suitable for designs with high levels of power density.
3.3 kV SiC MOSFETs and High Current-rated SiC SBDs
3.3 kV SiC MOSFETs and High Current-rated SiC SBDs

3.3 kV SiC MOSFETs and High Current-rated SiC SBDs designed to Develop Efficient Solutions for Electrified Transportation and Industrial Applications

Microchip Technology Inc. has announced the expansion of its SiC portfolio with the release of the lowest on-resistance [RDS(on)]
650V CoolSiC MOSFETs
650V CoolSiC MOSFETs

650V CoolSiC MOSFETs with Increased avalanche Capability target High Power Applications and offer Improved Switching Behavior

Infineon Technologies AG has introduced a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs that is built on Infineon’s st
SiC MOSFET Dual Modules
SiC MOSFET Dual Modules

High-Power SiC MOSFET Dual Modules with Built-in NTC Thermistor designed for Renewable Energy Power Generation Systems

Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions