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GaN

EcoGaN Power Stage ICs
EcoGaN Power Stage ICs

EcoGaN Power Stage ICs with GaN HEMTs and Gate Drivers for Component Size Reduction and Power Loss

ROHM has introduced the BM3G0xxMUV-LB series, a line of power stage ICs, integrating 650V Gallium Nitride High Electron Mobility Transi
New GaN HEMTs from ROHM
New GaN HEMTs from ROHM

ROHM Starts Mass Production of High-Performance 650V GaN HEMTs

ROHM has announced the mass production of two new Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), the GNP1070TC-Z and GNP1150TCA-Z.
 ViperGaN65 and ViperGaN100
ViperGaN65 and ViperGaN100

STMicroelectronics Launches VIPerGaN100 and VIPerGaN65 High-Voltage Switching Converters for Industrial and Consumer Applications

STMicroelectronics, one of the global leaders in semiconductor manufacturing has recently launched two new power converters, the ViperGaN65 and
3W SMD Single and Dual Output DC/DC Converters
3W SMD Single and Dual Output DC/DC Converters

RA3 Series: 3W SMD Single and Dual Output DC/DC Converters Designed to Power IGBT, Si, SiC and GaN Gate Drivers

RECOM has expanded its range of low-cost, unregulated DC/DC converters with the new RA3 series of 3W SMD parts that are designed to provi
Integra IGT5259L50 GaN/SiC Transistor
Integra IGT5259L50 GaN/SiC Transistor

Fully-Matched IGT5259L50 GaN/SiC Transistor Offers 50W at 5-6 GHz

Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.
GMICP2731-10 GaN MMIC from Microchip Technology
GMICP2731-10 GaN MMIC from Microchip Technology

GMICP2731-10 GaN MMIC Power Amplifier for High RF Output and Signal Quality in Satellite Communications

Microchip Technology has introduced the new GMICP2731-10 Ka-band MMIC (Monolithic Microwave Integrated Circuit) power amplifier that is fabricated based on GaN-on-Silicon Carbide (SiC) technology.
High-Power Broadband RF and Microwave PIN Diode Series from Fairview Microwave
High-Power Broadband RF and Microwave PIN Diode Series from Fairview Microwave

GaN Semiconductor Technology-Based High Power RF and Microwave PIN Diodes for Aerospace and Military Applications

Fairview Microwave has released the new high-power broadband RF and microwave PIN diode series that utilizes GaN semiconductor technology for ensuring state-of-the-art power performance with an excellent power-to-volume ratio.
GaN Semiconductor Technology-based Low Noise Amplifiers
GaN Semiconductor Technology-based Low Noise Amplifiers

GaN Semiconductor Technology-based Low Noise Amplifiers for Robust Input Power Protection

Fairview Microwave has introduced the Gallium Nitride (GaN) semiconductor technology-based input protected Low Noise Amplifiers (LNAs) for providing robust input protection.
GS-065-00-5-B-A E-Mode GaN Transistor
GS-065-00-5-B-A E-Mode GaN Transistor

GS-065-00-5-B-A: Compact Automotive Grade 650V GaN E-mode Transistor for Demanding High Power Applications

GaN System has expanded its family of automotive-grade 650V transistors with the introduction of GS-065-00-5-B-A, a 60A bottom side cooled transistor.