Schottky Barrier Diodes (SBDs) for Efficient Power Supply and Protection Circuits

ROHM has developed a new series of 100V breakdown Schottky barrier diodes (SBDs) with advanced reverse recovery time (trr), aimed at power supply and protection circuits in automotive, industrial, and consumer applications. SBDs with trench MOS structures offer lower forward voltage but longer reverse recovery times, affecting switching power loss. But the YQ series features a proprietary trench MOS structure. This design reduces both VF and reverse current (IR), achieving superior trr performance. Compared to conventional trench-type MOS products, the YQ series notably reduces trr loss by approximately 37% and overall switching loss by approximately 26%. 

Additionally, it enhances VF and IR losses compared to conventional planar-type SBDs, resulting in reduced power loss during forward bias applications like rectification. The YQ series finds ideal application in scenarios requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in electric vehicles (xEVs). Its design minimizes the risk of thermal runaway, ensuring reliability in demanding environments.

Features:

• MOS structure
• reverse recovery time (trr) of 15 ns
• Improves VF and IR losses
• Minimizes the risk of thermal runaway

 Applications:

• Automotive LED headlamps
• xEV (electric vehicle) DC-DC converters
• Power supplies for industrial equipment
• Lighting applications