New 600V Super Junction Structure N-Channel Power MOSFET Helps to Improve Efficiency of Power Supplies

Toshiba has expanded its line-up of N-channel power MOSFETs with the new product TK055U60Z1 which is the first 600V product in the DTMOSVI series. With the latest-generation process and a 600V super junction structure, this MOSFET is suitable for data centers, switching power supplies, and power conditioners for photovoltaic generators. It is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive.

By optimizing the gate design and process, 600V DTMOSVI series products reduce drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge, the figure of merit for MOSFET performance, by approximately 52%. This ensures the series achieve both low conduction loss and low switching loss, and helps to improve efficiency of the switching power supplies.

Features

• Low drain-source on-resistance

• High-speed switching properties with lower capacitance

Applications

• Data centers (switching power supplies for servers, etc.)

• Power conditioners for photovoltaic generators

• Uninterruptible power systems