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Highly Efficient and Robust Third Generation SiC MOSFETs for High Performance and Reliability in Industrial and Automotive Applications
GeneSiC Semiconductors has introduced the industry-leading 1200V 3rd generation G3R SiC MOSFETs in the optimized low-inductance discrete packages (SMD and through-hole). The new MOSFETs deliver industry-leading performance, robustness, and quality to harness a greater level of efficiency and system reliability in automotive and industrial applications.
Optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds, the new device delivers the industry’s lowest on-state resistance with a low gate charge. The new MOSFETs feature the softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures. GeneSiC’s 1200V SiC MOSFET discrete are 100 % avalanche (UIL) tested during production.
GeneSiC’s MOSFETs feature benchmark low reverse recovery charge (QRR) at all temperatures; 30% better than any similarly rated competitor device. The G3R SiC MOSFETs are designed to be driven at +15V/-5V gate drive; they can drive faster and more efficiently with their low device capacitances. The new SiC MOSFETs are suitable for various applications such as electric vehicle – power train and charging, solar inverter and energy storage, industrial motor drive, Uninterruptible Power Supply (UPS), Switched Mode Power Supply (SMPS), bi-directional DC-DC converters, smart grid and HVDC, induction heating and welding, pulsed power application.
Features of G3R SiC MOSFETs
- Superior QG x RDS(ON) figure-of-merit
- Low conduction losses at all temperatures
- 100 % avalanche tested
- Low gate charge and low internal gate resistance
- Normally-off stable operation up to 175°C
- Low device capacitances
- Fast and reliable body diode with low intrinsic charge
- Easy to use
Note: More technical information can be found in the G3R20MT12K Datasheet linked at the bottom of this page and on the G3R SiC MOSFETs product page.
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