1700V CoolSic SMD MOSFETs with Better Efficiency and Reduced Power Loss
Infineon Technologies has added the new 1700V surface-mounted devices (SMD) to its portfolio of CoolSiC MOSFET which can provide superior reliability along with low switching and conduction losses. The CoolSiC trench technology features, lowest device capacitances, and gate charges for transistors of this voltage class, this reduces power loss and provides 0.6% higher efficiency compared to other 1700SiC MOSFETs. The low losses allow the compact SMD assembly with natural convection cooling without the need for a heatsink.
The 1700V CoolSic MOSFETs were designed to be used in auxiliary power supplies in three-phase conversion systems such as motor drives, renewables, charging infrastructure, and HVDC systems that usually operate at low-power below 100W. In these cases, designers will prefer a single-ended flyback topology, by using the new CoolSiC MOSFETs 1700 V in the SMD package, the topology can be enabled for DC-link connected auxiliary circuits up to 1000VDC input voltage.
High efficiency and high-reliability auxiliary converters using a single-ended flyback converter can now be implemented in three-phase power conversion systems which leads to a smaller footprint and reduced bill of materials.
Features of 1700V CoolSic MOSFETs
- Optimized for flyback topologies with +12 V / 0 V gate-source voltage
- Compatible with common PWM controllers
- On-resistance ratings are 450 mΩ, 650 mΩ or 1000 mΩ
- Do not need a gate driver IC
- Low device capacitances
- Temperature independent switching losses
- An intrinsic diode with low reverse recovery charge
- Threshold-free on-state characteristics
Note: More technical information can be found in the datasheet linked at the bottom of this page and on the CoolSic MOSFETs product page.